200 mm wafer-8 port mainframe equipped with integrated cooldown module equipped with:

a) 1 x dry etching chamber for structuring III/V semiconductor materials (see point 3),

b) 1 x dry etching chamber for oxide/nitride (see point 4)

c) 1 x dry etching chamber for metal layers (main application ti/tin/Al; sihe punkt 5),

d) 1 x strip chamber for removal of photolack (see point 6).

200 mm wafer-8 port mainframe equipped with integrated cooldown module equipped with:

a) 1 x dry etching chamber for structuring III/V semiconductor materials (see point 3),

b) 1 x dry etching chamber for oxide/nitride (see point 4)

c) 1 x dry etching chamber for metal layers (main application ti/tin/Al; sihe punkt 5),

d) 1 x strip chamber for removal of photolack (see point 6).