The subject of the contract are HEMT (high electron mobility transistor) test structures and transistors based on heterostructures of aluminum scandium nitride and gallium nitride (AlScN/GaN) as well as aluminum-gallium nitride and gallium nitride (AlGaN/GaN) obtained by vapor phase epitaxy (metaloorganic vapor phase epitaxy; MOVPE).

3.1. The subject of the contract are test structures and transistors of the HEMT type (high electron mobility transistor) based on heterostructures of aluminum scandium nitride and gallium nitride (AlScN/GaN) as well as aluminum-gallium nitride and gallium nitride (AlGaN/GaN) obtained by the method of gasophase epitaxy using metalloorganic vapor phase epitaxy; MOVPE). Test structures and HEMT transistors must meet the following parameters:

- PCM (Process Control Monitor) structures and test structures on AlScN:

• rezystancja powierzchniowa (sheet resistance, Rsheet) ≤ 600 Ohm/sq.

- transistors based on AlScN/GaN heterostructures (60 pieces) designed for:

• blocking voltage ≥ 600 V

• pulsed current ≥ 20 A

• on-state resistance < 200 mOhm;

- transistors based on AlGaN/GaN heterostructures (40 pieces) designed for:

• blocking voltage ≥ 600 V

• pulsed current ≥ 20 A

• on-state resistance < 200 mOhm.

- all transistors (100 pieces) must be in the same housing:

• type DFN (Dual Float No-lead), SMD (Surface Mounted Device), mounted as part of an integrated circuit, with connections with low inductances and high-voltage isolation.

- all heterostructures should be crystallized using the technology of gas-phase epitaxy (metaloorganic vapor phase epitaxy; MOVPE).