The Leibniz Institute for Photonic Technologies e. V. writes out a coating plant for the deposition of metallic, dielectric and nitridic layers.

The tendered plant is to be used for layer separation of single and multi-layer functional materials with layer thicknesses from 1 nm to 5 μm, which can be manufactured insitu without vacuum interruption.

In this plant, ALD processes (atomic layer deposition, also plasma-based as PE-ALD) and PVD processes (physical vapor deposition, evaporation) must be available as processes for coatings of various functional layers with layer thicknesses (ds) of 1nm <= ds <= 500 nm. It is also required to realize SiO2, sixNY and sioXNY with higher growth rates (GR>=10 nm/min) than the usual ALD processes, pinhole-free and for layer thicknesses (ds) in the range of 100 nm <= ds <= 5 μm, alternatively using plasma-assisted vapour deposition process (PE CVD) or PVD.

The system should be designed as a cluster tool for cleanroom use and installed through the wall. The system is operated from the cleanroom area (ISO class 5, white range). All layer deposition in this cluster should be combined with high reproducibility without vacuum interruption, parallel and can be executed individually in each case. A homogeneity (layer thickness, conductivity, refractive index) must be achieved for all processes of <= 5% over an area of 150 mm diameter.

— scoring criteria: technical specifications 75%, price 25%.

The Leibniz Institute for Photonic Technologies e. V. writes out a coating plant for the deposition of metallic, dielectric and nitridic layers.

The tendered plant is to be used for layer separation of single and multi-layer functional materials with layer thicknesses from 1 nm to 5 μm, which can be manufactured insitu without vacuum interruption.

ALD processes (atomic layer deposition, also plasma-based as PE-ALD) and PVD processes (physical vapor deposition, evaporation) must be available as processes for coatings of various functional layers with layer thicknesses (ds) of 1 nm <= ds <= 500 nm. It is also required to realize SiO2, sixNY and sioXNY with higher growth rates (GR>=10 nm/min) than the usual ALD processes, pinhole-free and for layer thicknesses (ds) in the range of 100 nm <= ds <= 5 μm, alternatively using plasma-assisted vapour deposition process (PE CVD) or PVD.

The system should be designed as a cluster tool for cleanroom use and installed through the wall. The system is operated from the cleanroom area (ISO class 5, white range). All layer deposition in this cluster should be combined with high reproducibility without vacuum interruption, parallel and can be executed individually in each case. A homogeneity (layer thickness, conductivity, refractive index) must be achieved for all processes of <= 5% over an area of 150 mm diameter.