The IRIG research institute of CEA Grenoble wishes to acquire an ALE-ALD cluster for the manufacture of semiconductor devices for quantum computing.

The equipment should allow the processing of platelets of 200 mm and smaller.

The equipment will consist of two chambers, connected under vacuum by a robotic arm, into which the pads will be loaded via a loading airlock. The first chamber will be dedicated to the etching of semiconductor materials, silicon and germanium, their alloys and oxides. The engraving is done by Atomic Layer Etching (ALE). The second chamber will be dedicated to the deposition of oxide and nitride materials, aluminum oxide, silicon oxide, titanium nitride, aluminum nitride and niobium nitride.

The IRIG research institute of CEA Grenoble wishes to acquire an ALE-ALD cluster for the manufacture of semiconductor devices for quantum computing.

The equipment should allow the processing of platelets of 200 mm and smaller.

The equipment will consist of two chambers, connected under vacuum by a robotic arm, into which the pads will be loaded via a loading airlock. The first chamber will be dedicated to the etching of semiconductor materials, silicon and germanium, their alloys and oxides. The engraving is done by Atomic Layer Etching (ALE). The second chamber will be dedicated to the deposition of oxide and nitride materials, aluminum oxide, silicon oxide, titanium nitride, aluminum nitride and niobium nitride.

An option for a third chamber is requested, for the ALD deposition of oxides and nitrides in their respective chambers.

For all process chambers, the loading chamber and the robotic arm, the pressure shall be less than 1E-5 mbar, with helium leakage rates from the individual chambers less than 1E-4 mbar. L/s.