The subject of the contract are vertical Trench MOSFETs in GaN-on-GaN technology. Transistors must meet the following parameters:

- transistors (40 pieces):

• typu Trench MOSFET

• size 3 mm x 3 mm

• in GaN-on-GaN technology, i.e. on a gallium nitride (GaN) substrate

• obtained by vapour phase epitaxy using metalloorganic vapor phase epitaxy; MOVPE)

• designed for the following parameters: blocking voltage 650 V, on-state current 150 A

•Packed

- transistors (80 pieces):

• typu Trench MOSFET

• size 3 mm x 3 mm

• in GaN-on-GaN technology, i.e. on a gallium nitride (GaN) substrate

• obtained by vapour phase epitaxy using metalloorganic vapor phase epitaxy; MOVPE)

• designed for the following parameters: blocking voltage 1200 V, on-state current 150 A

•Packed

The subject of the contract are vertical Trench MOSFETs in GaN-on-GaN technology. Transistors must meet the following parameters:

- transistors (40 pieces):

• typu Trench MOSFET

• size 3 mm x 3 mm

• in GaN-on-GaN technology, i.e. on a gallium nitride (GaN) substrate

• obtained by vapour phase epitaxy using metalloorganic vapor phase epitaxy; MOVPE)

• designed for the following parameters: blocking voltage 650 V, on-state current 150 A

•Packed

- transistors (80 pieces):

• typu Trench MOSFET

• size 3 mm x 3 mm

• in GaN-on-GaN technology, i.e. on a gallium nitride (GaN) substrate

• obtained by vapour phase epitaxy using metalloorganic vapor phase epitaxy; MOVPE)

• designed for the following parameters: blocking voltage 1200 V, on-state current 150 A

•Packed