Metal lift-off processor.

One main topic of the process line is the processing of InP in a transfer substrate process, which in this special form is unique in the world and a unique feature of the FBH. In this process, the partially processed InP wafers (up to 7 levels) with z. B. fully processed BiCMOS wafers in the BCB bonding process.

In order to be able to achieve a high yield in this critical process step, the previously performed metal lift-off steps (up to 4) must be particle-free and without redepositions, deposits of metal particles on the back of the wafer must be avoided and, in addition, penetration of Solvents should be avoided in underlying BCB layers. The structures to be lifted are challenging with their smallest structure size and high height-width ratio. Damage to the generated metal structures must be avoided in the process.